Thermally induced stacking faults distributed inhomogeneously in Czochralski silicon crystals

Inhomogeneous but symmetrical distribution of bulk stacking faults in Czochralski silicon crystals has been attributed to the corresponding distribution of self-interstitials, which greatly depends on the crystal growth conditions. The inhomogeneous distribution of self-interstitials is not affected by the shape of the solid-melt interface, which greatly affects growth striations. Consequently, it has been proved that silicon self-interstitials depress oxygen precipitation and the growth of surface oxide layer in silicon.