Results of IR spectroscopic as well HVTEM investigations are given on the precipitation of oxygen in Si due to heat treatment within the temperature range 600 to 1275 °C. The initial oxygen concentrations of the Si samples are about 9 × 1017 cm−3 and about 1.5 × 1018 cm−3, respectively, with different concentrations of carbon within the range 1016 cm−3 ≦ [Cs]0 ≦ 1 × 1017 cm−3 in each case. It is shown that four different kinds of Si-oxygen precipitates exist at least, in dependence on the temperature of heat treatment. [Oi]0, [Cs]0, and the thermal history of the samples heat treated. It is assumed that there is only heterogeneous nucleation within the whole temperature range. For temperatures T ≧ 900 °C the oxygen precipitation occurs by the growth of asgrown microprecipitates. The origin of various IR spectra and corresponding HVTEM microphotographs is interpreted as being caused by differences in the shape and size of the Si-oxygen-precipitates.
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Gawobzewski et al. (1984) studied this question.