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CO2 and excimer laser (193, 248, 350 nm) treatments were performed on poly(etheretherketone) (PEEK). High fluence excimer laser irradiation induced efficient etching, mainly due to thermal effects. The irradiation with CO2 lasers and high fluence excimer lasers introduced limited changes in surface chemistry and morphology. Low fluence excimer laser irradiation, particularly at 193 nm and 248 nm, favored the occurence of photochemical phenomena. Surface chemical modifications leading to oxygen depletion and preferential elimination of the ketonic bridge were assessed. At the same time surface morphological alterations were found, diffraction effects led to cone‐like structures while the redeposition of heavy oligomers caused the formation of debris on the surface.
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Occhiello et al. (1989) studied this question.
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