X‐Ray Reflection Curves of Si Crystals with Microdefects in the Laue Case

X‐ray diffraction in crystals with randomly placed microdefects, which are not resolvable topographically, is studied theoretically and experimentally. On the basis of the general theory published in a previous paper the procedure is described for computing the coherent and incoherent parts of the diffracted and transmitted intensities. Using a simple model for the defect deformation field the influence is studied of the size and the defect concentration on the computed reflection and transmission curves. The computations are compared with experimental curves measured by a triple crystal diffractometer in the symmetrical Laue case and a qualitative agreement is found.