Photolithography in the vacuum ultraviolet (172 nm) with sub-400 nm resolution: photoablative patterning of nanostructures and optical components in bulk polymers and thin films on semiconductors

. Intricate patterns are readily produced in bulk acrylics or 40-200 nm thick acrylic films on Si with two or more exposures and overall process times of typically 10-300 s. The photoablation process is sufficiently precise that the smallest lateral feature size fabricated reproducibly to date, ∼350 nm, appears to be limited primarily by the photomask itself. Examples of the versatility and precision of this photolithographic process include the fabrication of arrays of aluminum nanomirrors, each atop a 350 nm or 1 μm-diameter Si post, as well as optical components such as transmission gratings or Fresnel lenses photoablated into PMMA.