Analysis of the 2p53s, 3p, 3d and 4s Configurations of Quadruply Ionized Silicon (Si V)

The spectrum of quadruply ionized silicon (Si V) was observed between 500 and 1 735 Å. About ninety new lines have been identified as transitions between the 2p53s, 3p, 3dand 4sconfigurations. Energies and designations are given for all these configurations. The ground-term transitions have been remeasured (90-118 Å). The experimental results are supported by parametric calculations and isoelectronic comparison.