We present an XPS method to determine the termination of the ZnO(0001) surface. By measuring O 1s and Zn 2p 3/2 core‐level x‐ray photoelectron spectra at photoemission angles of 0° and 70° and comparing the intensity ratio ( I O1s / I Zn2p3 ) θ=0 /( I O1s / I Zn2p3 ) θ=70 , the Zn and O termination can be distinguished. Calculations show that these two terminations have intensity ratios differing by ∼17%. This difference is not affected by a contamination layer provided that the contamination layer thickness is the same for these two differently terminated surfaces. Although this determination method prefers a clean ZnO(0001) surface ( in situ measurement), it seems also feasible for surfaces with known contamination layer thickness ( ex situ measurement). We have measured ex situ ZnO(0001)‐Zn, ZnO(000&1macr;)‐O single crystals and an epitaxial ZnO film deposited on Al 2 O 3 (0001). The measured intensity ratios of the first two samples agree with the calculated values for a 0.2 and 0.26 nm contamination layer, respectively. The intensity ratio and the O 1s contamination component intensity of the epitaxial ZnO film are close to those of the ZnO(0001)‐Zn single crystal thus pointing at Zn termination of the film.
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Zhang et al. (2004) studied this question.
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