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August 15, 1955Physical Review

Recombination of Injected Carriers at Dislocation Edges in Semiconductors

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Authors

JMJ. P. McKelveyClemson UniversityRLR. L. LonginiCenter for Strategic and International Studies

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McKelvey et al. (1955) studied this question.

synapsesocial.com/papers/6a892dec0bec466174a5e9fbhttps://doi.org/10.1103/physrev.99.1227
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Volume and Surface Recombination Rates for Injected Carriers in Germanium1954 · 62 citations
  2. 2The Mobility and Life of Injected Holes and Electrons in Germanium1951 · 354 citations