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The decay of the flatband voltage in MNOS capacitors has been investigated. Simultaneous determination of charge content in the nitride and the centroid of its distribution indicates both a discharge of the structure and a penetration of charge deep into the nitride. The discharge can be ascribed to back-tunneling, while the charge displacement is due to a redistribution of the remaining charge over the nitride traps.
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Maes et al. (1976) studied this question.
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