in situ Phosphorus-Doped Silicon Film Depositions by Magnetron Sputtering in Phosphorus Vapor

In situ phosphorus-doped silicon film deposition by sputtering in phosphorus vapor is presented. The phosphorus vapor is generated by heating solid red phosphorus in which the crucible is mounted in an rf planar magnetron sputtering system. Phosphorus is successfully in situ doped during deposition. Silicon films with phosphorus concentrations of up to 8.0×1021 cm-3 are obtained by controlling the crucible temperature. It was found that the deposition rate increases with increasing crucible temperature.