The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

The carrier distribution and recombination dynamics of InGaN/GaN multiple quantum well (MQW) light-emitting diode structure are investigated. Two emission peaks were observed in the low temperature photoluminescence spectra of an InGaN/GaN MQW structure, but only one peak was observed in the electroluminescence (EL) spectra. Combined with the spatially resolved cathodoluminescence (CL) measurements, it is found that the electrically injected carrier distribution is governed by hole transport and diffusion in InGaN/GaN MQW structure due to the much lower mobility of hole. And the electron and hole recombination of EL occurs predominantly in the QWs that are located closer to the p-GaN layer.