Sharp ridge structures with a 3 nm wide (0001) top facet and {11̄01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth. This is caused by {11̄01} facet growth induced by heavy Si doping. We obtained a large field emission (FE) current density of 11 mA/cm2 at 84 V/μm. One of the reasons for the large FE is that the ridge-structure formation decreases the energy barrier necessary for FE by about 2.4 eV.
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Kasu et al. (2001) studied this question.
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