High performance Pnp AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) have been fabricated. The transistors have a 300 Å strained InGaAs base, with indium composition linearly graded from 0 to 15%. The cutoff frequency and maximum oscillation frequency for a transistor with emitter area of 2 × 8 μm2 are measured to be 23.3 GHz and 40 GHz, respectively, at a collector current of −10 mA. These are the highest published results for Pnp HBTs.
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Liu et al. (1990) studied this question.
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