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July 1, 1991Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs

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KMK. MahalingamUnited States Air Force Research LaboratoryNŌN. ŌtsukaNippon Steel (Germany)MMM. R. MellochPurdue University West Lafayette

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Cite This Study

Mahalingam et al. (1991) studied this question.

synapsesocial.com/papers/6a893d7e9be9d02581bd4f1ahttps://doi.org/10.1116/1.585742
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