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GaInAs/InP hot electron transistors were fabricated for the first time by using an organometallic vapor phase epitaxy (OMVPE) method. A base transport efficiency was measured as 0.52 at 77 K for the structure of a 160 nm thick Ga0.47In0.53As base and InP barrier layers. High energy peaks observed in current spectra suggested an appreciable hot electron transport. These show a promising potential of the OMVPE grown GaInAs/InP for its use in ballistic electron devices.
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Ishihara et al. (1987) studied this question.
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