The electronic states in an AlGaAs-GaAs modulation-doped heterointerface with a lateral structure of order 10 nm are analyzed self-consistently. The structure is realized by using a fractional layer superlattice. Resonant gaps appear in the electron state band diagram because the potential cannot be expressed as a sum of the functions of two directions. The electron channel location strongly depends on which subband the electron belongs to.
No takes yet. Share an insight, caveat, or question.
Tokura et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: