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July 1, 1988Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

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Authors

JGJ. M. GainesPhilips (Netherlands)PPP. M. PetroffLinköping University HKH. KroemerUniversity of California, Santa Barbara

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Cite This Study

Gaines et al. (1988) studied this question.

synapsesocial.com/papers/6a883f656304c7fd8e4dfa63 https://doi.org/10.1116/1.584225

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