An electron wave interference device (wash board transistor), consisting of a modulation-doped Al0.3Ga0.7As/GaAs heterostructure and a 16nm (AlAs)0.25(GaAs)0.75 vertical superlattice is fabricated. This transistor shows drain current oscillation due to electron wave interference at 4.2 K at large biasing currents. The (AlAs)0.25(GaAs)0.75 vertical superlattice improves the biasing current by about 103 times compared to the previous wash board transistor with a 500 nm tungsten grating gate.
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Tsubaki et al. (1989) studied this question.
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