Field-effect transistors of a completely new category are proposed and analysed, in which the conductivity modulation Δ G by the gate voltage V g is brought forth mainly through the V g -dependence of electron mobility. Since the sheet concentration of electrons in such FETs need not be modulated, the switching speed of the device is expected to be free from the transit time limitation, reaching the range of subpicosecond. As a specific example, an FET with a dual-channel configuration is discussed.
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H. Sakaki (1982) studied this question.
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