Surface Band Structure of Electron Inversion Layers on Vicinal Planes of Si(100)

We have found new minigaps in inversion layers on Si surfaces tilted at θ from (100) at kF=0.85(2πa)sinθ, (2πa)sinθ, and 1.15(2πa)sinθ. Our results confirm the surface band-structure model of Sham et al., demonstrate that both intervalley and intravalley minigaps exist, and show that the minibands, expected for two-dimensional electron gas with a one-dimensional superlattice, have been realized in inversion layers with θ3^∘.