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January 1, 1970IBM Journal of Research and Development

Superlattice and Negative Differential Conductivity in Semiconductors

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Authors

LEL. EsakiYokohama University of PharmacyRTRaphael TsuUniversity of North Carolina at Charlotte

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Overview

Theoretical analysis demonstrates negative differential conductivity in semiconductor superlattices, indicating quantum mechanical effects across artificial minizones.

Key Points

  • To evaluate quantum mechanical transport properties and conductivity behavior in a semiconductor engineered with a one-dimensional periodic superlattice potential.
  • Modeled a one-dimensional periodic potential introduced during epitaxial growth by alternating alloy composition or impurity density with a period on the order of 100 Å.
  • Analyzed electron dynamics under the condition that the superlattice period is shorter than the electron mean free path, dividing the Brillouin zone into minizones.
  • Subdivision of the Brillouin zone creates narrow permitted and forbidden energy bands, altering the electron energy-momentum relation.
  • Excitation of electrons past the energy-momentum inflection point by moderate electric fields occurs when scattering times satisfy a threshold condition, producing negative differential conductance.

Cite This Study

Esaki et al. (1970) studied this question.

synapsesocial.com/papers/69d76055f182769aa8b8accfhttps://doi.org/10.1147/rd.141.0061
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