Negative differential conductivity in n-Si structures with contacts asymmetric in area

This is the authors' abstract. We don't add key points for this paper.

The physical mechanism of the occurrence of negative differential conductivity in n -Si structures with contacts that are highly asymmetric in area is considered. It is shown that the effect is related to the formation of a steady variband region near the point contact of the structure caused by thermoelastic strain of the crystal at nonuniform Joule heating.