Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions

This article focuses on investigating the total ionizing dose (TID) effects ofβ-Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation ofβ-Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects ofβ-Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance ofβ-Ga2O3 SBD devices.