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March 3, 2008Applied Physics Letters

Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts

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HKHyunsoo KimPohang University of Science and TechnologyJCJaehee ChoChungbuk National UniversityYPYongjo ParkSeoul National University

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Kim et al. (2008) studied this question.

synapsesocial.com/papers/6a893df01fb56efa37d43c70https://doi.org/10.1063/1.2844887
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