Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 18, 2003Applied Physics Letters

Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

View Full Paper
Ask AI
Bookmark
Share

Authors

CHChin-Yuan HsuNational Yang Ming Chiao Tung UniversityWLWen‐How LanNational University of KaohsiungYWYewChung Sermon WuNational Yang Ming Chiao Tung University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hsu et al. (2003) studied this question.

synapsesocial.com/papers/6a893e6aa7eee2293bcaf772https://doi.org/10.1063/1.1601306
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization2000 · 63 citations
  2. 2Electrical characterization of GaN p-n junctions with and without threading dislocations1998 · 358 citations
  3. 3Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition1997 · 537 citations
  4. 4Very low resistance multilayer Ohmic contact to n-GaN1996 · 460 citations
  5. 5Metal contacts to gallium nitride1993 · 334 citations