Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 17, 2017Applied Physics Express

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

View Full Paper
Ask AI
Bookmark
Share

Authors

CLCory LundKHKarine HestrofferNHNirupam Hatui

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Lund et al. (2017) studied this question.

synapsesocial.com/papers/6a893e40b4e829b19bd43b54https://doi.org/10.7567/apex.10.111001
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Effects of polarization charge on the photovoltaic properties of InGaN solar cells2010 · 102 citations
  2. 2Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition2007 · 189 citations
  3. 3Polarization-engineered GaN/InGaN/GaN tunnel diodes2010 · 156 citations
  4. 4Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management2013 · 18 citations
  5. 5Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes1995 · 1,092 citations