Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 15, 2007Journal of Applied Physics

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

View Full Paper
Ask AI
Bookmark
Share

Authors

SKS. KellerNFN. FichtenbaumFWFeng Wu

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Keller et al. (2007) studied this question.

synapsesocial.com/papers/6a9773bcda663e44ef76e7bahttps://doi.org/10.1063/1.2801406
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy2003 · 25 citations
  2. 2Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC2006 · 68 citations
  3. 3Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate2000 · 135 citations
  4. 4Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN1999 · 53 citations
  5. 5Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy1994 · 60 citations