280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

We report on room-temperature (RT) operation of a 280 nm deep ultraviolet light emitting diode lamp with monolithic micro-pixel device geometry. RT continuous-wave power as high as 42 mW was measured at a dc pump current of 1 A for a device active area of 880 µm 2 . For RT operation at a peak dc power of 22 mW (pump current 400 mA), the lamps packaged on TO-66 headers had a 50% power lifetime in excess of 1500 h.