Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities

The performance of InGaN/GaN light-emitting diodes (LEDs) fabricated using NH 3 was varied by intentionally adding H 2 O, O 2 , or CO. The oxygen concentration in the active layer varied with the type of impurity, which was related to the binding energy of the impurity. When a small amount of oxygen was incorporated in the InGaN active layer without Si doping through an oxygen-containing impurity, the light output power of the LED was improved. On the other hand, the light output power of the LED gradually deteriorated with increasing oxygen concentration. The oxygen-containing impurities affected the light output power of the LEDs. When NH 3 with any oxygen-containing impurities was purified using a purification system giving a guaranteed impurity concentration of less than 10 ppb, the light output power of the LED was recovered to that of the LED fabricated with pure NH 3 .