The bias voltage dependence of the photocurrent and capacitance in an InGaAs/InP heterojunction switching photodiode were measured. The switching voltage, at which the photocurrent saturated, increased with increasing incident optical power and decreasing temperature. The capacitance at low frequency had a peak at a bias voltage slightly below the switching voltage. These results cannot be explained by theories previously reported on n-n isotype heterojunctions.
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Kanbe et al. (1981) studied this question.
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