The detailed behavior of SiNx films as masks for Zn diffusion into GaAs at both low and high temperatures has been investigated. It is found that the film behavior as a mask is a function of the refractive index of the SiNx mask film and that a film with index n=2.06 shows optimum performance at both 650 and 950 °C. The experimental results suggest that the film with n=2.06 is nearly stoichiometric. Possible reasons for this optimized masking behavior are discussed.
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Zou et al. (1987) studied this question.
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