A study of ion-implanted zinc in GaAs has been made using three annealing techniques: e-beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron-beam annealing. Graphite strip heating and electron-beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical-vapor-deposited Si3N4 with reactively evaporated AlN encapsulants.
No takes yet. Share an insight, caveat, or question.
Barrett et al. (1985) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: