Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure

By means of hydrostatic pressure‐dependent measurements of the electroluminescence of blue/violet laser diodes with In0.1Ga0.9N/GaN active layers grown on bulk GaN it is shown that at conditions close to lasing threshold full screening of polarization‐induced electric fields (PIEFs) is provided by injected charge. In contrast, in order to achieve PIEF screening at currents much below lasing threshold, Si doping of quantum barriers is seen to be necessary. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)