Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Photocurrent spectroscopy and hydrostatic-pressure-dependent electroluminescence are used to show that heavy 1×1019cm−3 Si doping of quantum barriers is sufficient to achieve full screening of polarization-induced electric fields (PIEFs) in nitride light emitting diodes (LEDs) and laser diodes (LDs) with InGaN quantum wells. Furthermore, it is shown that at currents close to lasing threshold in nitride LDs injected charge alone is sufficient to achieve full screening of PIEFs. In contrast, full screening at low currents can only be accomplished via Si doping of quantum barriers.