Hybrid integration of bipolar transistors and microlasers: Current-controlled microlaser smart pixels

We describe the hybrid integration of GaAs/AlGaAs heterojunction bipolar transistors with GaAs/AlGaAs (850 nm operation) and InGaAs/AlGaAs (980 nm operation) vertical-cavity microlasers to form ultra-low-drive-current microlaser smart pixels. We achieved a single-mode, low divergence, 1 mW output with a 70 μA base injection current and digital electronics matched input impedance. The integration technology is appropriate for the integration of optoelectronic integrated circuits to GaAs and Si microelectronics circuits.