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September 23, 1991Applied Physics Letters

Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption

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Authors

RBR. P. BryanPhotonics (United States)GOG. R. OlbrightUniversity of ArizonaWFW. S. Fu

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Bryan et al. (1991) studied this question.

synapsesocial.com/papers/6a893eb692d4b940f2def45dhttps://doi.org/10.1063/1.106268
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