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Multiple high-field domains have been observed in n-GaAs using a resistive point-contact probe having a 2-micron spatial resolution and a 5-GHz frequency response. The probe is easy to construct, is compact and maneuverable, and can be used for identifying oscillatory modes when n-GaAs or other bulk semiconductors are embedded in coaxial or waveguide microwave circuits.
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Thim et al. (1968) studied this question.
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