By controlling the illumination intensity along a sample of photoconducting GaAs, the point of nucleation of the high field domain has been varied. When a very thin line shadow was projected on an illuminated sample, the oscillation frequency corresponded to the distance between the shadow and the anode and could be varied continuously over a range of about 5:1 by varying the position of the shadow along the sample.
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W.H. Haydl (1968) studied this question.
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