Analysis of Device Characteristics for InGaN Semiconductor Lasers

Carrier overflow and perpendicular transverse mode in InGaN multi-quantum-well lasers have been analyzed by numerical calculation. A high acceptor concentration for the p-type cladding layer and the reduction of the active layer volume have a large effect on the reduction of carrier overflow. Anti-guide-like behavior of the waveguide mode is formed in InGaN laser structures where the cladding layers have insufficient thickness. The layer structure should be designed so as to reduce the carrier overflow and suppress the anti-guide-like mode.