Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration

The thermal and electrical properties of high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy were investigated in the high-carrier-concentration region between 1.0×1018 and 1.24×1019 cm-3. The carrier concentration was almost identical to the Si doping concentration. An electrical resistivity as low as 2.5 mΩ cm was obtained at the carrier concentration n=1.24×1019 cm-3. The electron mobilities from Hall measurements were 441 and 200 cm2 V-1 s-1 for n=1.0×1018 and 1.24×1019 cm-3, respectively, which are significantly higher than those reported in the literature. The thermal conductivity measured by the laser flash method was consistently high in the measured carrier concentration range, i.e., about 2.0 W cm-1 K-1 for n=1.0×1018 cm-3 and 1.87 W cm-1 K-1 for n=1.24×1019 cm-3.