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October 26, 2004IEEE Transactions on Electron Devices

Thermal Modeling and Measurement of AlGaN–GaN HFETs Built on Sapphire and SiC Substrates

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JPJungjae ParkUlsan National Institute of Science and TechnologyMSMoo Whan ShinYonsei UniversityCLC.C. LeeHyundai Motor Group (South Korea)

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Park et al. (2004) studied this question.

synapsesocial.com/papers/6a893eeb4850d3e108c97646https://doi.org/10.1109/ted.2004.836540
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