Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 2002Journal of Applied Physics

Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

NSNaoteru ShigekawaOsaka Gakuin UniversityKSKenji ShiojimaUniversity of FukuiTSTetsuya SuemitsuTohoku University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Shigekawa et al. (2002) studied this question.

synapsesocial.com/papers/6a945b1f70faba02c63ed63bhttps://doi.org/10.1063/1.1481973
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors1998 · 11 citations
  2. 2Impact ionisation in AlGaN-GaN heterostructure fieldeffecttransistors on sapphire substrates1998 · 8 citations
  3. 3Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors1998 · 100 citations
  4. 4An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation1998 · 118 citations
  5. 5Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire2001 · 77 citations