A single crystal with a thin surface p‐n junction has been grown from the vapor and its photovoltaic properties measured at various temperatures. The detector has high quantum efficiency but low electrical resistance, which is discussed. With the detector cooled to 77°K the experimentally achieved value of Analysis indicates that with a quieter amplifier and a more suitable contact arrangement a should have been achieved with the same junction. With development substantially better performance seems probable.
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Kimmitt et al. (1961) studied this question.