A guard ring structure with a p+-n−-n junction formed by Zn diffusion at 450°C gave a high gain planar InP avalanche photodiode. A maximum multiplication factor of more than 50 was obtained uniformly within the photosensitive area without edge breakdown.
No takes yet. Share an insight, caveat, or question.
Ando et al. (1981) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: