BeMgZnSe-based ultraviolet lasers

We have studied BeMgZnSe-based quantum well ultraviolet (UV) lasers closely lattice matched to GaP/Si (001) substrates using molecular beam epitaxy (MBE). At first, we achieved epitaxial growth and 346 to 360-nm-photoluminescence (PL) at room temperature (RT) of a single crystalline BeZnSe ternary on GaP with a Be content of 34–54%. Then, we obtained a high-energy BeMgZnSe quaternary with 3.78 eV, epitaxially grown by introducing a BeZnSe buffer layer (BL). In addition, we surveyed the refractive index of the BeMgZnSe lattice matched to GaP. Next, we achieved transition emissions from the quantum levels of BeZnSe-based quantum well structures with Be contents of 18% (well) and 41% (barrier), respectively. Finally, we have achieved the optically pumped ultraviolet lasing of BeMgZnSe-based quantum well laser structures for the first time. The wavelength and threshold power density were 373 nm and 0.415 MW/cm 2 , respectively.