Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

Degradation characteristics of p-i-n BeZnSe/Zn(Be)CdSe light-emitting diodes were investigated. Undoped short-period superlattices, which provide efficient hole transport from the p + -BeTe:N near-contact region (hole injector) into the active region, were used instead of the p -doped BeZnSe:N emitter. It is demonstrated that this makes it possible to considerably lengthen the operating life of the light-emitting diodes at highest direct current densities (∼4.5 kA/cm 2 ) at room temperature.