Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al:In=5:1) indicates that a lower threshold current and higher characteristic temperature (T 0) value can be obtained when the Al composition is higher than 20%. When Al=25%, the threshold current is reduced at the expense of a decreased T 0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300–370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.