Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
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Implication
Experimental study demonstrates continuous-wave violet laser diodes operable at 50°C, indicating potential for reliable high-density optical storage systems.
Key Points
- Develop violet InGaN/GaN/AlGaN laser diodes capable of reliable continuous-wave operation at elevated temperatures with a stable fundamental transverse mode.
- Fabricated violet InGaN multi-quantum-well/GaN/AlGaN separate-confinement-heterostructure laser diodes on epitaxially laterally overgrown GaN on sapphire.
- Evaluated optical output power, near-field transverse modes, and operating lifetimes under continuous-wave conditions at room temperature and at 50°C.
- Demonstrated a threshold current density of 3.9 kA/cm² and continuous-wave optical output power up to 30 mW with a stable fundamental transverse mode at room temperature.
- Achieved an operational lifetime exceeding 1,000 hours under continuous-wave operation at 50°C and 5 mW constant power, with an estimated lifetime of approximately 3,000 hours.
Cite This Study
Nakamura et al. (1999) studied this question.