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March 1, 1998Japanese Journal of Applied PhysicsOpen Access

High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

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Authors

Shuji Nakamura
Shuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Nakamura et al. (1998) studied this question.

synapsesocial.com/papers/6a7dbbc0968fa26fcacb4e87https://doi.org/10.1143/jjap.37.l309
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