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September 9, 1996Applied Physics Letters

Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes

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Authors

Shuji NakamuraShuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Cite This Study

Nakamura et al. (1996) studied this question.

synapsesocial.com/papers/6a893f43b11dee029fbd4c15https://doi.org/10.1063/1.117032
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